David M. Longo, Ph.D. is a partner in the firm ’ sulfur Electrical, Mechanical, and Design rehearse groups. His legal practice covers all aspects of strategic guidance, patent portfolio development and management, prosecution, reissue, follow-up, ex parte appeals, opinions of advocate, freedom-to-operate and landscape analyses, due diligence, pre-litigation guidance, and license negotiations. International and domestic clients rely on him to help them develop and grow their utility and design apparent portfolios. He frequently travels to Europe and Japan to speak on a kind of U.S. patent jurisprudence topics for clients and practitioners .
Dr. Longo ’ s technical foul experience bridges the materials skill and electrical technology fields, particularly in the areas of semiconductor device materials and devices, semiconductor device work and characterization, flimsy film deposition and analysis, nanotechnology ( including nanoprinting, nanocomposites, nanocrystals, and nanoparticles ), battery materials ( including anode and cathode materials for lithium and Li-ion batteries ), alternative lithography technologies, character optics/optoelectronics, and microelectromechanical systems ( MEMS ). He besides has significant experience in focused ion air ( FIB ) microscopy and micromachining, transmission electron microscopy ( TEM ), scanning electron microscopy ( SEM ), and atomic force microscopy ( AFM ). jointly, this feel has enabled Dr. Longo to help his clients obtain patents across a diverse array of technical fields, from consumer electronic products to medical devices, photovoltaics, and barrage management systems ( BMS ) .
His Ph.D. dissertation, entitled “ Development of a Deep Submicron Printing Technology, ” importantly contributed to a Defense Advanced Research Projects Agency ( DARPA ) undertaking for nanoscale print of electronic materials onto planar and curved surfaces. His experimental research applied FIB direct-write technology to fabricate complex nanoscale patterns on reclaimable printheads. Elastomer replica of the printheads were cast, coated with self-assembled monolayers, and ultimately “ printed ” onto semiconductor device substrates and glass lenses using a combination of microcontact print and etching. early academic inquiry involved FIB microscopy and FIB-assisted material deposition, angstrom well as analytic TEM to study the effects of heat treatment on nanoscale films and dissemination barriers deposited onto single-crystal silicon substrates .
Dr. Longo has several technical publications and has spoken on his nanoscale print research at technical conferences. He has besides spoken on developments in U.S. patent law and the patent procedure at technical meetings in the U.S., a well as at nanotech consultancy conferences in Spain and Egypt.

prior to joining the firm, Dr. Longo worked for another law firm primarily in the areas of patent rede and prosecution, and worked full time as a patent agent while attending jurisprudence educate .



  • Virginia
  • District of Columbia
  • New Jersey
  • U.S. Patent and Trademark Office
  • Eastern District of Virginia
  • Court of Appeals for the Federal Circuit
  • Court of Appeals for Veterans Claims
  • U.S. Supreme Court


  • Second Prize in Nathan Burkan Memorial Paper Competition, sponsored by A.S.C.A.P., for paper entitled “Using the D.M.C.A. Anticircumvention Provisions to Avoid § 102(b) of the Copyright Act and the Limited Times Clause in Art. I, § 8 of the U.S. Constitution” (2004)
  • Received five awards between 1998 and 2000 for research and scholastic activities while a graduate student.

Technical Publications

  • Y. Liu, D.M. Longo, and R. Hull, “Ultra Rapid Nanostructuring of Polymethlmethacrylate (PMMA) films using Ga+ focused ion beams,” Appl. Phys. Lett., 82(3), 346-348, (2003).
  • R. Hull, T. Chraska, Y. Liu, and D.M. Longo, “Microcontact Printing: New Mastering and Transfer Techniques for High Throughput, Resolution, and Depth of Focus,” Mat. Sci. Eng. C19, 383-392 (2002).
  • D.M. Longo, W.E. Benson, T. Chraska, and R. Hull, “Deep Submicron Microcontact Printing of Electronic Materials Utilizing Focused Ion Beam Fabricated Printheads,” Appl. Phys. Lett., 78(7), 981-983, (2001).
  • D.M. Longo and R. Hull, “Direct Focused Ion Beam Writing of Printheads for Pattern Transfer Utilizing Microcontact Printing,” Mat. Res. Soc. Symp. Proc.: Materials Development for Direct Write Technologies, 624, 157-162, (2001).
  • D.M. Longo and R. Hull, “Microcontact Printing (µCP) of Electronic Materials Utilizing Focused Ion Beam Fabricated Printheads,” Proc. 1999 Intl. Semicond. Dev. Res. Symp., 33-36 (1999).
  • R. Hull and D.M. Longo, “Development of a Nanoscale Printing Technology for Planar and Curved Surfaces,” Proc. 10th Intl. Work. Phys. Semicond. Dev., New Delhi, India, II, 974-981 (1999); also available through the Proceedings of SPIE (The Int’l Soc. of Optical Eng.) 3975, 974-981 (2000).
  • D.M. Longo, J.M. Howe, and W.C. Johnson, “Development of a Focused Ion Beam (FIB) Technique to Minimize X-ray Fluorescence during Energy Dispersive X-ray Spectroscopy (EDS) of FIB Specimens in the Transmission Electron Microscope (TEM),” Ultramicroscopy, 80(2), 85-97, (1999).
  • D.M. Longo, J.M. Howe, and W.C. Johnson, “Experimental Method for Determining Cliff-Lorimer Factors in Transmission Electron Microscopy (TEM) Utilizing Stepped Wedge-Shaped Specimens Prepared by Focused Ion Beam (FIB),” Ultramicroscopy, 80(2), 69-84, (1999). (Micrographs from this article selected by editor Pieter Kruit for the cover illustration of the Oct. 1999 issue of Ultramicroscopy.)
  • D.M. Longo, J.M. Howe, and W.C. Johnson, “The Effect of Focused Ion Beam (FIB) Specimen Geometry on X-ray Fluorescence During Energy Dispersive X-ray Spectroscopy (EDS) Analysis in the Transmission Electron Microscope (TEM),” Proc. of Microscopy and Microanalysis, 4, 856-857, (1998).  

Professional Affiliations

  • American Intellectual Property Law Association (AIPLA)
  • U.S. Bar – Japan Patent Office Liaison Council (represent Virginia Bar IP Section)
  • Materials Research Society (MRS)
  • Institute of Electrical and Electronics Engineers (IEEE)



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